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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW34 UHF linear power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 14" capstan envelope with ceramic cap.
BLW34
QUICK REFERENCE DATA R.F. performance MODE OF OPERATION class-A; linear amplifier fvision MHz 860 860 Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. PIN CONFIGURATION PINNING - SOT122A. PIN 1 2
handbook, halfpage
VCE V 25 25
IC mA 600 600
Th C 70 25
dim(1) dB -60 -60
Po sync (1) W > typ. 1,8 2,15 > typ.
Gp dB 9 10,2
DESCRIPTION collector emitter base emitter
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 25 C Storage temperature Operating junction temperature IC ICM Ptot Tstg Tj max. max. max. max. VCESM VCEO VEBO max. max. max.
BLW34
50 V 30 V 4V 2,25 A 3,5 A 31 W 200 C
-65 to +150 C
MGP454
handbook, halfpage
10
handbook, halfpage
40
MGP455
Ptot IC (A) Th = 70 C 1 Tmb = 25 C
(1)
(W) 30
20
10-1 1 10 VCE (V) 102
10 0 50 Th (C) 100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE (see Fig.4) From junction to mounting base (dissipation = 15 W; Tmb = 79 C; i.e. Th = 70 C) From mounting base to heatsink Rth j-mb Rth mb-h = = 6,2 K/W 0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
handbook, full pagewidth
10
MGP456
Rth j-h (K/W) Th = 125 C 100 C 75 C 50 C 25 C Tj = 200 C 0 C
8
6 100 C 75 C 125 C
150 C
175 C
4 0 10 20 Ptot (W) 30
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example Nominal class-A operation: VCE = 25 V; IC = 600 mA; Th = 70 C. Fig.4 shows: Rth j-h Tj Typical device: Rth j-h Tj max. 6,75 K/W max. typ. typ. 170 C 5,45 K/W 152 C
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 8 mA open base; IC = 60 mA Emitter-base breakdown voltage open collector; IE = 4 mA Collector cut-off current VBE = 0; VCE = 30 V VBE = 0; VCE = 30 V; Tj = 175 C D.C. current gain IC = 600 mA; VCE = 25 V IC = 600 mA; VCE = 25 V; Tj = 175 C Collector-emitter saturation voltage IC = 1,2 A; IB = 0,12 A Transition frequency at f = 500 MHz -IE = 0,6 A; VCB = 25 V -IE = 1,2 A; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz IC = 40 mA; VCE = 25 V Collector-stud capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. Cre Ccs typ. typ. Cc typ.
(2) (1)
BLW34
V(BR)CES V(BR)CEO V(BR)EBO ICES ICES hFE hFE VCEsat fT fT
> > > < < > typ. < typ. typ. typ.
50 V 30 V 4V 2,0 mA 5,0 mA 20 40 120 450 mV 3,3 GHz 3,0 GHz 13,5 pF 8,4 pF 1,2 pF
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
MGP457
handbook, halfpage
75
MGP458
handbook, halfpage
60
hFE VCE = 25 V
Cc (pF) 40
50
5V 25 20 typ
0 0 1 2 IC (A) 3
0 0 20 VCB (V) 40
Fig.5 Typical values; Tj = 25 C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
4
MGP459
fT (GHz)
typ
3
2
1 0 1 2 -IE (A) 3
Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 C
August 1986
6
Philips Semiconductors
Product specification
UHF linear power transistor
APPLICATION INFORMATION fvision (MHz) 860 860 860 Note VCE (V) 25 25 25 IC (mA) 600 600 600 Th (C) 70 70 25 dim (dB) (1) -60 -60 -60 Po sync (W) (1) > typ. typ. 1,8 1,9 2,15
BLW34
Gp (dB) > typ. typ. 9 10,2 10,2
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level.
handbook, full pagewidth
L1
C1
L2
T.U.T.
L6
C5
L7 50
50 L4 C2 L3 C3 C4 L5 C6
C7
C8
C9
C10
C11
C12
C13
+VBB
+VCC
MGP460
Fig.8 Test circuit at fvision = 860 MHz. List of components: C1 = C5 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C2 = C6 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 13,5 mm and 46 mm respectively from transistor edge C3 = C4 = 2 pF multilayer ceramic chip capacitor (ATC 100A-2RO-C-PX-50) C7 = C10 = 1 nF chip capacitor C8 = 100 nF polyester capacitor C9 = C12 = 470 nF polyester capacitor C11 = 10 nF polyester capacitor C13 = 3,3 F/40 V solid aluminium electrolytic capacitor L1 = stripline (9,2 mm x 7,0 mm) L2 = stripline (14,2 mm x 7,0 mm) L3 = micro choke 0,47 H (cat. no. 4322 057 04770) L4 = stripline (see Fig.9 printed-circuit board layout) L5 = 34 mm straight Cu wire (1,0 mm); height above print 3,3 mm L6 = stripline (41,0 mm x 7,0 mm) L7 = stripline (8,7 mm x 7,0 mm) L1; L2; L4; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2,74); thickness 1/16". Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10. August 1986 7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
95
handbook, full pagewidth
46
C9 C12 +VBB L3 C7 C3 L1 C1 C4 C2 L2 L6 C8 L4 L5 C10 +VCC
+
C13
C11
C6
L7 C5
MGP461
Fig.9 Component layout and printed-circuit board for 860 MHz test circuit.
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
8
Philips Semiconductors
Product specification
UHF linear power transistor
List of components: C1 = 100 pF ceramic capacitor C2 = C3 = 100 nF polyester capacitor
+VCC TR1 C3 R3 R8 R9 R4 R5 0
MGP437
BLW34
+Vs D2 C4 R6
R1 D1 R2 C1 C2 R7
C4 = 10 F/25 V solid aluminium electrolytic capacitor R1 = 150 carbon resistor (0,25 W) R2 = 100 preset potentiometer (0,1 W) R3 = 82 carbon resistor (0,25 W)
+VBB
R4 = R5 = 2,2 k carbon resistor (0,25 W) R6 = 2,8 ; parallel connection of 2 x 5,6 carbon resistors (0,5 W each) R7 = R8 = 820 carbon resistor (0,25 W) R9 = 33 carbon resistor (0,25 W) D1 D2 = BZY88-C3V3 = BY206
Fig.10 Bias circuit for class-A linear amplifier at fvision = 860 MHz.
TR1 = BD136
handbook, full pagewidth
-50
MGP462
20
dcm dim (dB) (%) dim
-60 dcm
10
-70
0 0 2 4 Po sync (W) 6
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power. Typical values; VCE = 25 V; IC = 600 mA; fvision = 860 MHz; - - - Th = 25 C; Th = 70 C.
Information for wideband application from 470 to 860 MHz available on request. 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal -75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier -7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to -20 dB. August 1986 9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW34
handbook, halfpage
5
MGP463
handbook, halfpage
30
MGP464
ri, xi () 2.5 ri
RL, XL () 20 RL
0
xi 10
-2.5
XL
-5 10
102
f (MHz)
103
0 10
102
f (MHz)
103
Typical values; VCE = 25 V; IC = 600 mA; Th = 70 C.
Typical values; VCE = 25 V; IC = 600 mA; Th = 70 C.
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
Ruggedness The BLW34 is capable of withstanding a load mismatch (VSWR = 50 through all phases) under the following conditions: f = 860 MHz; VCE = 25 V; IC = 600 mA; Th = 70 C and PL = 4 W.
handbook, halfpage
35
MGP465
Gp (dB) 25
15
5 10
102
f (MHz)
103
Typical values; VCE = 25 V; IC = 600 mA; Th = 70 C.
Fig.14
August 1986
10
Philips Semiconductors
Product specification
UHF linear power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BLW34
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
August 1986
11
Philips Semiconductors
Product specification
UHF linear power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW34
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
12

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